JT Microelectronics is a unique provider of innovative solutions for next-generation Gallium Nitride power devices. We offer anything that you need to take full advantage of the GaN technology with a large portfolio of products such as Driver ICs, GaN power switches, and GaN Schottky Diodes in combination with dedicated assistance and development.
JT Microelectronics was founded in 2020 by a team of experts in power electronics with different industrial and academic backgrounds. We thrive on an international collaborative environment with our HQ in Shenzhen (China) and a strong R&D center in Switzerland. Our vision is to be the link between Europe's Silicon Valley and Shenzhen world manufacturing centers.
The company's strengths are its unique R&D team, continuous innovation, and dedicated service. Since its foundation, the company has adhered to the principles of talent-based, honest business, providing customers with comprehensive solutions to help them improve performance and reduce costs. Our products have broad application prospects in consumer electronics, wireless charging, data center, 5G communications, lidar, new energy vehicles, etc.
JT Microelectronics provides each team member with an entrepreneurial platform to deliver their talents and pursue their dreams, bringing together elite semiconductor professionals from different countries and backgrounds, all united by the desire to innovate. We are power device experts, chip designers, packaging specialists, and management and marketing professionals.
Our common goal, create a green intelligent future!
Eckdaten
- 50 Mitarbeiter
- Aarbergstrasse 46, Biel/Bienne
- JT Microelectronics AG
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